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Proceedings Paper

Design optimization of SiGe/Si: modulation-doped multiple quantum well modulator for high-speed operation
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Paper Abstract

A structure based on the free-carrier-induced electrorefractive effect in Si/SiGe modulation-doped quantum wells, placed in the intrinsic region of a PIN diode has been proposed. Effective index variation produced by carrier depletion under a reverse bias leads to a phase modulation of a guided wave. The measured variation of the effective index is typically 2.10-4 for a 0V to 6V variation of the reverse bias voltage. This study is focused on the integration of modulation doped SiGe/Si quantum-well optical modulator in SOI submicron rib waveguides with optical losses lower than 0.4dB/cm. The influence of the geometrical parameters, of layer doping and of the metallic contacts has been determined through numerical simulations and optimized modulation structures are defined. The obtained factor of merit LχVχ is then of 1.26 which can be favorably compared with the best published results obtained with other optimized modulators.

Paper Details

Date Published: 20 April 2006
PDF: 9 pages
Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 61830D (20 April 2006); doi: 10.1117/12.661915
Show Author Affiliations
Sylvain Maine, CNRS/Univ. Paris-Sud (France)
Delphine Marris-Morini, CNRS/Univ. Paris-Sud (France)
Laurent Vivien, CNRS/Univ. Paris-Sud (France)
Daniel Pascal, CNRS/Univ. Paris-Sud (France)
Éric Cassan, CNRS/Univ. Paris-Sud (France)
Suzanne Laval, CNRS/Univ. Paris-Sud (France)

Published in SPIE Proceedings Vol. 6183:
Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits
Giancarlo C. Righini, Editor(s)

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