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Proceedings Paper

Complex coupled distributed feedback laser monolithically integrated with electroabsorption modulator and semiconductor optical amplifier at 1.3μm wavelength
Author(s): Philipp Gerlach; Martin Peschke; Thomas Wenger; Brem K. Saravanan; Christian Hanke; Steffen Lorch; Rainer Michalzik
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Paper Abstract

We report on the design and experimental results of monolithically integrated optoelectronic devices containing distributed feedback (DFB) laser, electroabsorption modulator (EAM), and semiconductor optical amplifier (SOA). Common InGaAlAs multiple quantum well (MQW) layers are used in all device sections. The incorporation of local lateral metal gratings in the DFB section enables device fabrication by single-step epitaxial growth. The emission wavelength is λ=1.3 micrometer. More than 2 mW single-mode fiber-coupled output power as well as 10 dB/2 V static extinction ratio have been achieved. Modulation experiments clearly show 10 Gbit/s capability.

Paper Details

Date Published: 20 April 2006
PDF: 9 pages
Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 61831J (20 April 2006); doi: 10.1117/12.661878
Show Author Affiliations
Philipp Gerlach, Ulm Univ. (Germany)
Martin Peschke, Ulm Univ. (Germany)
Infineon Technologies AG (Germany)
Thomas Wenger, Infineon Technologies AG (Germany)
Brem K. Saravanan, Ulm Univ. (Germany)
Infineon Technologies AG (Germany)
Christian Hanke, Infineon Technologies AG (Germany)
Steffen Lorch, Ulm Univ. (Germany)
Rainer Michalzik, Ulm Univ. (Germany)


Published in SPIE Proceedings Vol. 6183:
Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits
Giancarlo C. Righini, Editor(s)

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