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Proceedings Paper

High power LEDs for visible and infrared emission
Author(s): S. Illek; C. Jung; R. Windisch; H. Zull; K. Streubel
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Paper Abstract

The market entrance of thinfilm based, substrate-less LEDs has stimulated the field of high-brightness LEDs. One of the most prominent advantages of thinfilm LEDs is the possibility to achieve a high light extraction efficiency independently of the chip area. This feature is particularly suitable for large-area, high-flux devices. In this paper, we report on high-power LEDs with a chip-area of 1 mm2 for red and infrared emission. Mounted in packages with improved heat sinking and operated at a continuous-wave (cw) current of 800mA, the devices achieve an output power of 440 mW both for red (λ = 615 nm) and infrared (λ = 850 nm) wavelengths. Together with Osram's ThinGaN chips, a family of devices is available with very similar emission characteristics, performance and geometry, which allow the assembly of powerful light engines for a number of advanced applications.

Paper Details

Date Published: 22 February 2006
PDF: 9 pages
Proc. SPIE 6134, Light-Emitting Diodes: Research, Manufacturing, and Applications X, 613401 (22 February 2006); doi: 10.1117/12.661559
Show Author Affiliations
S. Illek, OSRAM Opto Semiconductors GmbH (Germany)
C. Jung, OSRAM Opto Semiconductors GmbH (Germany)
R. Windisch, OSRAM Opto Semiconductors GmbH (Germany)
H. Zull, OSRAM Opto Semiconductors GmbH (Germany)
K. Streubel, OSRAM Opto Semiconductors GmbH (Germany)


Published in SPIE Proceedings Vol. 6134:
Light-Emitting Diodes: Research, Manufacturing, and Applications X
Klaus P. Streubel; H. Walter Yao; E. Fred Schubert, Editor(s)

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