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Proceedings Paper

Monolithically integrated twin ring diode lasers with quantum-dot active region
Author(s): Hongjun Cao; Allen L. Gray; Luke F. Lester; Marek Osiński
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Paper Abstract

Optoelectronic integrated circuits incorporating twin ring diode lasers with InAs/InGaAs/GaAs quantum-dot active region have been fabricated and characterized. Directional control and unidirectional operation of ring diode lasers are demonstrated by forward biasing an S-section waveguide incorporated within the ring cavity. Mode-beating spectra from individual ring diode lasers are observed at three bands near 7.5 GHz, 16.6 GHz, and 25.1 GHz, corresponding to single, double, and triple longitudinal mode spacing in the ring cavity. In addition, mode beating spectra between optically independent integrated twin ring diode lasers are also demonstrated, with minimal linewidth of ~4 MHz.

Paper Details

Date Published: 28 February 2006
PDF: 9 pages
Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 611521 (28 February 2006); doi: 10.1117/12.661401
Show Author Affiliations
Hongjun Cao, Univ. of New Mexico (United States)
Allen L. Gray, Zia Laser, Inc. (United States)
Luke F. Lester, Univ. of New Mexico (United States)
Marek Osiński, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 6115:
Physics and Simulation of Optoelectronic Devices XIV
Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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