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Proceedings Paper

Analysis of localized recombination in quantum dots
Author(s): Huw D. Summers; Helen Pask; Peter Blood
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Paper Abstract

We have calculated the recombination rates of electrons and holes in a quantum dot ensemble. The calculation treats the various recombination mechanisms as localized events at the dot site and uses global population statistics, re-interpreted to provide integer occupancies of the ground and excited states of the dots. The results show that the localization means that unambiguous functional forms describing the recombination in terms of charge carrier density can no longer be determined. The evolution of the recombination rates with increasing injection is complex and the different radiative and non-radiative routes have a similar dependence. Experimentally this means that studies of the light output versus current can no longer be used to assess the dominant recombination process.

Paper Details

Date Published: 28 February 2006
PDF: 8 pages
Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151F (28 February 2006); doi: 10.1117/12.661399
Show Author Affiliations
Huw D. Summers, Cardiff Univ. (United Kingdom)
Helen Pask, Cardiff Univ. (United Kingdom)
Peter Blood, Cardiff Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 6115:
Physics and Simulation of Optoelectronic Devices XIV
Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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