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Proceedings Paper

Strong coupling in a single quantum dot semiconductor microcavity system
Author(s): S. Reitzenstein; G. Sęk; A. Löffler; C. Hofmann; S. Kuhn; J. P. Reithmaier; L. V. Keldysh; V. D. Kulakovskii; T. L. Reinecke; A. Forchel
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Paper Abstract

Properties of atom-like emitters in cavities are successfully described by cavity quantum electrodynamics (cQED). We report on cavity quantum electrodynamics (cQED) experiments in a single quantum dot semiconductor system. CQED, which is a very active research field in optics and solid state physics, can be divided into a weak and a strong coupling regime. In case of weak coupling, the spontaneous emission rate of an atom-like emitter, e.g. a single quantum dot exciton, can be enhanced or reduced compared to the value in vacuum in an irreversible emission process. In contrast, a reversible energy exchange between the emitter and the cavity mode takes place when the conditions for strong coupling are fulfilled. We investigate weak as well as strong coupling in a system based on a low density In0.3Ga 0.7As quantum dot layer placed as the active layer in a high quality planar AlAs/GaAs distributed Bragg reflector cavity grown by molecular beam epitaxy. Using electron beam lithography and deep plasma etching, micropillars with high Q-factors (up to 43.000 for 4 μm diameter) were realized from the planar cavity structure. Due to the high oscillator strength of the In0.3Ga 0.7As quantum dots together with a small mode volume in high finesse micropillar cavities it is possible to observe strong coupling characterized by a vacuum Rabi splitting of 140 μeV. The fabrication of high-Q micropillar cavities as well as conditions necessary to realize strong coupling in the present system are discussed in detail.

Paper Details

Date Published: 28 February 2006
PDF: 8 pages
Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151M (28 February 2006); doi: 10.1117/12.661393
Show Author Affiliations
S. Reitzenstein, Univ. of Würzburg (Germany)
G. Sęk, Univ. of Würzburg (Germany)
Wrocław Univ. of Technology (Poland)
A. Löffler, Univ. of Würzburg (Germany)
C. Hofmann, Univ. of Würzburg (Germany)
S. Kuhn, Univ. of Würzburg (Germany)
J. P. Reithmaier, Univ. of Würzburg (Germany)
Univ. of Kassel (Germany)
L. V. Keldysh, Institute for Solid State Physics (Russia)
V. D. Kulakovskii, Lebedev Physical Institute (Russia)
T. L. Reinecke, Naval Research Lab. (United States)
A. Forchel, Univ. of Würzburg (Germany)


Published in SPIE Proceedings Vol. 6115:
Physics and Simulation of Optoelectronic Devices XIV
Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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