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Proceedings Paper

Nonequilibrium theory for semiconductor laser systems
Author(s): A. Thränhardt; S. Becker; C. Schlichenmaier; I. Kuznetsova; S. W. Koch; J. Hader; J. V. Moloney; W. W. Chow
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Paper Abstract

A dynamical laser model is coupled to a fully microscopic calculation of scattering rates, allowing effcient calculations without phenomenological parameters. The approach is used to analyze nonequilibrium effects in the switch-on of an optically pumped laser structure. Lasing leads to kinetic hole burning in both electron and hole distribution. The gain spectrum, however, does not show spectrally narrow hole burning but a reduction over a wide range of frequencies compared to the equilibrium gain because of the large homogeneous broadening in the high density lasing system.

Paper Details

Date Published: 28 February 2006
PDF: 10 pages
Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61150W (28 February 2006); doi: 10.1117/12.661349
Show Author Affiliations
A. Thränhardt, Philipps-Univ. Marburg (Germany)
S. Becker, Philipps-Univ. Marburg (Germany)
C. Schlichenmaier, Philipps-Univ. Marburg (Germany)
I. Kuznetsova, Philipps-Univ. Marburg (Germany)
S. W. Koch, Philipps-Univ. Marburg (Germany)
J. Hader, Optical Sciences Ctr., Univ. of Arizona (United States)
J. V. Moloney, Optical Sciences Ctr., Univ. of Arizona (United States)
W. W. Chow, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 6115:
Physics and Simulation of Optoelectronic Devices XIV
Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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