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Proceedings Paper

Exciton dephasing in strain-compensated self-assembled InAs quantum dots
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Paper Abstract

We investigate the dephasing of excitons in InAs self-assembled quantum dots by using a transient four-wave-mixing technique. A used sample is specially designed to compensate the strain. We observe long-lived coherence of excitons at 5 K which corresponds to the dephasing time longer than a nanosecond, where the photon energy of the excitation pulse is 0.874~eV. We find that a pure dephasing due to exciton-phonon interactions dominates in the exciton dephasing rather than the population decay and the exciton-exciton interaction in the weak excitation region, by analyzing the population lifetime and the polarization-dependent dephasing time.

Paper Details

Date Published: 28 February 2006
PDF: 8 pages
Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151O (28 February 2006); doi: 10.1117/12.661300
Show Author Affiliations
Junko Ishi-Hayase, National Institute of Information and Communications Technology (Japan)
Kouichi Akahane, National Institute of Information and Communications Technology (Japan)
Naokatsu Yamamoto, National Institute of Information and Communications Technology (Japan)
Mamiko Kujiraoka, National Institute of Information and Communications Technology (Japan)
Sophia Univ. (Japan)
Kazuhiro Ema, Sophia Univ. (Japan)
Masahide Sasaki, National Institute of Information and Communications Technology (Japan)


Published in SPIE Proceedings Vol. 6115:
Physics and Simulation of Optoelectronic Devices XIV
Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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