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Proceedings Paper

Infrared and Raman comparative study of Yb-doped Y2SiO5 thin films and single crystals
Author(s): Aurélie Denoyer; Serge Jandl; Bruno Viana; Olivier Guillot-Noël; Philippe Goldner; Denis Pelenc; Florent Thibault
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Paper Abstract

In this study Yb-doped Y2SiO5 single crystals and thin films crystal field excitations and Raman active phonons characteristics have been compared using infrared absorption and Raman spectroscopy. The thin films high quality has been confirmed and their ability to adjust by co-doping various properties such as the Yb3+ sites occupations and Yb3+-Yb3+ pair interactions have been evidenced.

Paper Details

Date Published: 17 April 2006
PDF: 9 pages
Proc. SPIE 6190, Solid State Lasers and Amplifiers II, 619017 (17 April 2006); doi: 10.1117/12.661184
Show Author Affiliations
Aurélie Denoyer, Univ. de Sherbrooke (Canada)
Serge Jandl, Univ. de Sherbrooke (Canada)
Bruno Viana, Lab. de Chimie Appliquée de l'Etat Solide (France)
Olivier Guillot-Noël, Lab. de Chimie Appliquée de l'Etat Solide (France)
Philippe Goldner, Lab. de Chimie Appliquée de l'Etat Solide (France)
Denis Pelenc, CEA Grenoble (France)
Florent Thibault, CEA Grenoble (France)


Published in SPIE Proceedings Vol. 6190:
Solid State Lasers and Amplifiers II
Alphan Sennaroglu, Editor(s)

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