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Proceedings Paper

Quantum-dot infrared photodetectors and focal plane arrays
Author(s): Manijeh Razeghi; Ho-Chul Lim; Stanley Tsao; Maho Taguchi; Wei Zhang; Alain Andre Quivy
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Paper Abstract

We report our recent results about mid-wavelength infrared quantum-dot infrared photodetectors (QDIPs) grown by low-pressure metalorganic chemical vapor deposition. A very high responsivity and a very low dark current were obtained. A high peak detectivity of the order of 3×1012 Jones was achieved at 77 K. The temperature dependent device performance was also investigated. The improved temperature insensitivity compared to QWIPs was attributed to the properties of quantum dots. The device showed a background limited performance temperature of 220 K with a 45° field of view and 300K background. The current device problems are a low quantum efficiency and a stronger than expected performance degradation as a function of operating temperature. Possible ways to improve the quantum efficiency and operating temperature are discussed.

Paper Details

Date Published: 17 May 2006
PDF: 6 pages
Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62060I (17 May 2006); doi: 10.1117/12.661175
Show Author Affiliations
Manijeh Razeghi, Northwestern Univ. (United States)
Ho-Chul Lim, Northwestern Univ. (United States)
Stanley Tsao, Northwestern Univ. (United States)
Maho Taguchi, Northwestern Univ. (United States)
Wei Zhang, Northwestern Univ. (United States)
Alain Andre Quivy, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 6206:
Infrared Technology and Applications XXXII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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