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Proceedings Paper

Metrology (including materials characterization) for nanoelectronics
Author(s): A. C. Diebold; J. Price; P. Y. Hung
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Paper Abstract

Integrated circuits have already entered the world of nanoelectronics. According to the International Technology Roadmap for Semiconductors, the industry will be extending CMOS technology through new materials and device structures for at least the next fifteen years. During that time, the gate length of nanotransistors will shrink to less than 10 nm. The electrical properties of nano-transistors will move into regime of short channel devices where new physics will result in changes in transistor operation. The number of transistors in a single IC is already approaching a number that results 2 billion functions per IC by 2010. Nano-sized features and high density will challenge metrology and characterization and most certainly move measurement further into the world of nanotechnology. Beyond CMOS, new nano-technology based devices are being considered as a means of continuing the rapid pace of technological innovation in electronics.

Paper Details

Date Published: 4 April 2006
PDF: 5 pages
Proc. SPIE 6175, Testing, Reliability, and Application of Micro- and Nano-Material Systems IV, 617501 (4 April 2006); doi: 10.1117/12.661119
Show Author Affiliations
A. C. Diebold, SEMATECH, Inc. (United States)
J. Price, SEMATECH, Inc. (United States)
P. Y. Hung, SEMATECH, Inc. (United States)

Published in SPIE Proceedings Vol. 6175:
Testing, Reliability, and Application of Micro- and Nano-Material Systems IV
Robert E. Geer; Norbert Meyendorf; George Y. Baaklini; Dietmar W. Vogel, Editor(s)

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