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Proceedings Paper

Diblock copolymer directed self-assembly for CMOS device fabrication
Author(s): Li-Wen Chang; H.-S. Philip Wong
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Paper Abstract

We present our recent work on using diblock copolymer directed self-assembly for the fabrication of silicon MOSFETs. Instead of using self-assembly to assemble the entire device, we plan to utilize self-assembly to perform one critical step of the complex MOSFET process flow in the beginning. Initial results of using PS-b-PMMA to define pores with hexagonal array having diameter of 20 nm for contact hole patterning will be described. Potential integration issues for making MOSFETs will also be addressed.

Paper Details

Date Published: 14 March 2006
PDF: 6 pages
Proc. SPIE 6156, Design and Process Integration for Microelectronic Manufacturing IV, 615611 (14 March 2006); doi: 10.1117/12.661028
Show Author Affiliations
Li-Wen Chang, Stanford Univ. (United States)
H.-S. Philip Wong, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 6156:
Design and Process Integration for Microelectronic Manufacturing IV
Alfred K. K. Wong; Vivek K. Singh, Editor(s)

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