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Proceedings Paper

Relative intensity noise of an injected semiconductor laser
Author(s): J. Poette; O. Vaudel; P. Besnard
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Paper Abstract

A study of the Relative Intensity Noise (RIN) of an optically injected semiconductor laser is presented versus the injected power. The seeded laser is then operating from an amplifying regime towards a locking one, at the same wavelength than that of the master one. It is shown that when the Master is more coherent than the slave, a reduction of the RIN of the slave is progressively observed along with an increase of the injected power. In the converse case, no significant modification of the RIN is experimentally observed.

Paper Details

Date Published: 9 June 2006
PDF: 10 pages
Proc. SPIE 6054, International Conference on Lasers, Applications, and Technologies 2005: Advanced Lasers and Systems, 605407 (9 June 2006); doi: 10.1117/12.660527
Show Author Affiliations
J. Poette, École Nationale des Sciences Appliquées et de Technologies, CNRS (France)
O. Vaudel, École Nationale des Sciences Appliquées et de Technologies, CNRS (France)
P. Besnard, École Nationale des Sciences Appliquées et de Technologies, CNRS (France)


Published in SPIE Proceedings Vol. 6054:
International Conference on Lasers, Applications, and Technologies 2005: Advanced Lasers and Systems
Guenter Huber; Vladislav Ya. Panchenko; Ivan A. Scherbakov, Editor(s)

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