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Proceedings Paper

In-line monitoring of advanced copper CMP processes with picosecond ultrasonic metrology
Author(s): Ming Hsun Hsieh; J. H. Yeh; Mingsheng Tsai; Chan Lon Yang; John Tan; Sean Patrick Leary
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Paper Abstract

Chemical mechanical planarization (CMP) is a challenging process step for manufacturers implementing dualdamascene architectures at the 65 nm technology node. The polishing rate can vary significantly from wafer-to-wafer, across a single wafer, and across a single die, depending on factors including electroplate profile, slurry chemistry, pad wear, and underlying structure. The process is further complicated by the introduction of low-k dielectrics that have significantly different mechanical properties than the harder SiO2 they replace. Picosecond ultrasonics is a nondestructive, small-spot method that can be used for in-line on-product monitoring of metal processes including copper CMP. In this paper we will present gauge-capable picosecond ultrasonic results on copper erosion test structures that also demonstrate excellent correlation with electrical test measurements and TEM results on 65 nm products.

Paper Details

Date Published: 24 March 2006
PDF: 14 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61522C (24 March 2006); doi: 10.1117/12.660205
Show Author Affiliations
Ming Hsun Hsieh, United Microelectronics Corp. (Taiwan)
J. H. Yeh, United Microelectronics Corp. (Taiwan)
Mingsheng Tsai, United Microelectronics Corp. (Taiwan)
Chan Lon Yang, United Microelectronics Corp. (Taiwan)
John Tan, Rudolph Technologies (United States)
Sean Patrick Leary, Rudolph Technologies (United States)


Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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