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Proceedings Paper

Solar-blind avalanche photodiodes
Author(s): Ryan McClintock; Kathryn Minder; Alireza Yasan; Can Bayram; Frank Fuchs; Patrick Kung; Manijeh Razeghi
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Paper Abstract

There is a need for semiconductor based UV photodetectors to support avalanche gain in order to realize better performance and more effectively compete with existing photomultiplier tubes. However, there are numerous technical issues associated with the realization of high-quality solar-blind avalanche photodiodes (APDs). In this paper, APDs operating at 280 nm, within the solar-blind region of the ultraviolet spectrum, are investigated. The devices consist of an Al0.38Ga0.62N active region grown atop a high quality AlN template layer designed to allow back illumination of the devices through the sapphire substrate. These devices perform well in the unbiased mode of operation. Under the application of large reverse bias these devices show a soft breakdown starting at relatively low electric fields. The devices achieve a maximum optical gain of ~1000 at a reverse bias of ~90 Volts, which corresponds to an electric field strength of 2.5 MV/cm. The origins of this gain are discussed in detail and modeling of the devices is used to investigate the electric field build up in the multiplication region.

Paper Details

Date Published: 28 February 2006
PDF: 10 pages
Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 61271D (28 February 2006); doi: 10.1117/12.660147
Show Author Affiliations
Ryan McClintock, Northwestern Univ. (United States)
Kathryn Minder, Northwestern Univ. (United States)
Alireza Yasan, Northwestern Univ. (United States)
Can Bayram, Northwestern Univ. (United States)
Frank Fuchs, Northwestern Univ. (United States)
Patrick Kung, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 6127:
Quantum Sensing and Nanophotonic Devices III
Manijeh Razeghi; Gail J. Brown, Editor(s)

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