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Proceedings Paper

Combined use of x-ray reflectometry and spectroscopic ellipsometry for characterization of thin film optical properties
Author(s): Jason P. Cain; Stephen Robie; Qiaolin Zhang; Bhanwar Singh; Iraj Emami
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Paper Abstract

Accurate characterization of the optical properties of thin film materials used in semiconductor manufacturing is essential for many metrology applications in the fab, including film thickness measurement and scatterometry. The most common method for measuring these optical properties is spectroscopic ellipsometry. In this work X-ray reflectometry is used as a means of independently determining the thickness of a film to be characterized. This information is then used in the conventional analysis of spectroscopic ellipsometry data to extract the optical properties. In addition, the use of a Cauchy dispersion model fitted to the transparent region of the spectrum (if it exists) was used to determine the film thickness. Once the thickness was determined, a point-by-point regression was performed on the ellipsometry data to extract the optical properties. The results from these techniques were compared with each other and with conventional analysis of the ellipsometry data using common dispersion models.

Paper Details

Date Published: 15 March 2006
PDF: 12 pages
Proc. SPIE 6155, Data Analysis and Modeling for Process Control III, 61550P (15 March 2006); doi: 10.1117/12.660088
Show Author Affiliations
Jason P. Cain, Advanced Micro Devices, Inc. (United States)
Stephen Robie, Spansion LLC (United States)
Qiaolin Zhang, Advanced Micro Devices, Inc. (United States)
Bhanwar Singh, Advanced Micro Devices, Inc. (United States)
Iraj Emami, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 6155:
Data Analysis and Modeling for Process Control III
Iraj Emami; Kenneth W. Tobin, Editor(s)

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