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Proceedings Paper

High-performance high-reliability 880-nm diode laser bars and fiber-array packages
Author(s): M. Fouksman; S. Lehconen; J. Haapamaa; K. Kennedy; J. Li
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Paper Abstract

The 880 nm diode laser is emerging as the source of choice for pumping Nd:YV04 laser crystals because it offers higher pumping efficiency than 808 nm diode lasers[1]. This paper reports on recent progress in the development of high power, high reliability, 880 nm laser bars. Specifically, high performance has been achieved based on Coherent's aluminum-free active (AAA) epitaxial structures while maintaining lifetimes greater than 10,000 hours. This includes 30% fill factor, 1 cm bars on conductively cooled packages (CCP) operating at 51 W with proven manufacturability. We observed power conversion efficiency (PCE) of up to 56%. These lasers have a far field fast axis divergence of 32° (FWHM), and slow axis divergence of <7° (FWHM). Typical value of the FWHM of output spectrum is 2.5 nm. These bars were used to build fiber array packages (FAPs) operating at 45 W. We have achieved FAP PCE of 50% and numerical aperture of <0.12. Reliability of both bars and FAP was shown to exceed 10000h MTBF.

Paper Details

Date Published: 15 February 2006
PDF: 6 pages
Proc. SPIE 6104, High-Power Diode Laser Technology and Applications IV, 61040A (15 February 2006); doi: 10.1117/12.659897
Show Author Affiliations
M. Fouksman, Coherent Inc. (United States)
S. Lehconen, Coherent Finland (Finland)
J. Haapamaa, Coherent Finland (Finland)
K. Kennedy, Coherent Inc. (United States)
J. Li, Coherent Inc. (United States)


Published in SPIE Proceedings Vol. 6104:
High-Power Diode Laser Technology and Applications IV
Mark S. Zediker, Editor(s)

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