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Proceedings Paper

ZnO nanorods for electronic nanodevice applications
Author(s): Won Il Park; J. Yoo; H.-J. Kim; C. H. Lee; Gyu-Chul Yi
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Paper Abstract

We report on fabrications and characteristics of high performance ZnO nanorod nanodevices including Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs) and logic gate devices. Electrical characteristics of several ZnO nanorod MOSFETs are compared in this proceeding. In particular, after coating polymer thin films on ZnO nanorod surfaces, the nanorod MOSFETs exhibited much improved field effect transistor characteristics including field effect electron mobility as high as 3000 cm2/Vs. In addition, ZnO nanorod Schottky diodes and MESFETs were fabricated using Au/ZnO Schottky contacts without any specific oxide etching process. These devices have been used for realization of ZnO nanorod logic gates.

Paper Details

Date Published: 2 March 2006
PDF: 11 pages
Proc. SPIE 6122, Zinc Oxide Materials and Devices, 612206 (2 March 2006); doi: 10.1117/12.659650
Show Author Affiliations
Won Il Park, Pohang Univ. of Science and Technology (South Korea)
J. Yoo, Pohang Univ. of Science and Technology (South Korea)
H.-J. Kim, Pohang Univ. of Science and Technology (South Korea)
C. H. Lee, Pohang Univ. of Science and Technology (South Korea)
Gyu-Chul Yi, Pohang Univ. of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 6122:
Zinc Oxide Materials and Devices
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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