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Proceedings Paper

Implementation of contact hole patterning performance with KrF resist flow process for 60nm node DRAM application
Author(s): Hyoung-ryeun Kim; Yeong-Bae Ahn; JongKuk Kim; SeokKyun Kim; DongHeok Park; Young-Sik Kim
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Paper Abstract

Small contact holes are the most difficult structures for microlithography to print because it is sensitively affected by the process condition, pattern density and environment as well. Moreover, the patterning of very small contact hole features for the 60nm node DRAM device generation will be a difficult challenge for 248nm lithography. However, we have already demonstrated the applicability of thermal flow resist to print 80nm contact holes for DRAM device using 248nm lithography in previous studies. In this work, we study the potential for contact photoresist reflow to be used with 248nm photoresist to increase process windows of small contact dimensions at the 60nm node DRAM device generation (0.21 k1). With KrF 0.80NA scanner, resist flow process and layout optimization were carried out to achieve the contact hole patterning. And also the exposure condition was optimized. For a contact hole with CDs of 69nm +/- 10%, Focus-Exposure windows over the wafer are 0.25μm and 8%, respectively. In conclusion, we have successfully achieved the contact hole patterning with KrF resist flow process for the 60nm node DRAM device.

Paper Details

Date Published: 21 March 2006
PDF: 7 pages
Proc. SPIE 6154, Optical Microlithography XIX, 615441 (21 March 2006); doi: 10.1117/12.659398
Show Author Affiliations
Hyoung-ryeun Kim, Hynix Semiconductor Inc. (South Korea)
Yeong-Bae Ahn, Hynix Semiconductor Inc. (South Korea)
JongKuk Kim, Hynix Semiconductor Inc. (South Korea)
SeokKyun Kim, Hynix Semiconductor Inc. (South Korea)
DongHeok Park, Hynix Semiconductor Inc. (South Korea)
Young-Sik Kim, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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