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Proceedings Paper

Optically pumped semiconductor lasers at 505 nm in the power range above 100 mW
Author(s): Wolf Seelert; Stefan Kubasiak; Johannes Negendank; R. von Elm; Juan Chilla; Hailong Zhou; Eli Weiss
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Paper Abstract

Lasers based on optically pumped semiconductors (OPS) offer unique capabilities in both wavelength tailoring and power scaling compared to traditional solid-state lasers. In particular, these lasers can be designed in wavelength to realize for instance 505nm, which enables excitation of two fluorescent dye chemistry sets originally established by 488 and 514 nm legacy argon lasers. Highly efficient intra cavity frequency doubling of an 1010nm OPS yields over 100 mW of output power at 505 nm. In this paper we will present a brief background on OPS technology. We will then discuss specifics of the 505 nm laser and present both performance and reliability data for this laser.

Paper Details

Date Published: 28 February 2006
PDF: 4 pages
Proc. SPIE 6100, Solid State Lasers XV: Technology and Devices, 610002 (28 February 2006); doi: 10.1117/12.659286
Show Author Affiliations
Wolf Seelert, Coherent Luebeck (Germany)
Stefan Kubasiak, Coherent Luebeck (Germany)
Johannes Negendank, Coherent Luebeck (Germany)
R. von Elm, Coherent Luebeck (Germany)
Juan Chilla, Coherent (United States)
Hailong Zhou, Coherent (United States)
Eli Weiss, Coherent (United States)


Published in SPIE Proceedings Vol. 6100:
Solid State Lasers XV: Technology and Devices
Hanna J. Hoffman; Ramesh K. Shori, Editor(s)

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