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Proceedings Paper

ZnO based light emitting diodes growth and fabrication
Author(s): M. Pan; R. Rondon; J. Cloud; V. Rengarajan; W. Nemeth; A. Valencia; J. Gomez; N. Spencer; J. Nause
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Paper Abstract

ZnO and N-doped ZnO thin films were grown by MOCVD on sapphire and ZnO substrates. Diethyl zinc and O2 were used as sources for Zn and O, respectively. A specially designed plasma system was employed to produce atomic N dopant for in-situ doping. Proper disk rotation speeds were found for ZnO growth on different size wafers. High crystal quality N-doped ZnO films were grown based on optimized growth conditions. Wet chemical etch of ZnO was investigated by using NH4Cl, and etch activation energy was calculated to be 463meV. Ohmic contact on N-doped ZnO film was achieved by using Ni/Au/Al multiple layers. ZnO based p-n junction has demonstrated rectification. Electroluminescence at about 384nm was obtained from ZnO based LED.

Paper Details

Date Published: 2 March 2006
PDF: 6 pages
Proc. SPIE 6122, Zinc Oxide Materials and Devices, 61220M (2 March 2006); doi: 10.1117/12.659240
Show Author Affiliations
M. Pan, Cermet, Inc. (United States)
R. Rondon, Cermet, Inc. (United States)
J. Cloud, Cermet, Inc. (United States)
V. Rengarajan, Cermet, Inc. (United States)
W. Nemeth, Cermet, Inc. (United States)
A. Valencia, Cermet, Inc. (United States)
J. Gomez, Cermet, Inc. (United States)
N. Spencer, Cermet, Inc. (United States)
J. Nause, Cermet, Inc. (United States)


Published in SPIE Proceedings Vol. 6122:
Zinc Oxide Materials and Devices
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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