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Proceedings Paper

Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes
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Paper Abstract

The authors report on recent advances in the development of mid-, long-, and very long-wavelength infrared (MWIR, LWIR, and VLWIR) type-II InAs/GaSb superlattice infrared photodiodes. The residual carrier background of binary type-II InAs/GaSb superlattice photodiodes of cut-off wavelengths around 5 μm has been studied in the temperature range between 10 and 200 K. A four-point, capacitance-voltage technique on mid-wavelength and long-wavelength type-II InAs/GaSb superlattice infrared photodiodes reveal residual background concentrations around 5 × 1014 cm-3. Additionally, recent progress towards LWIR photodiodes for focal plane array imaging applications is presented. Single element detectors with a cut-off wavelength, λc,50%, of 10.2 μm demonstrated detectivities of approximately 1 × 1011 cmHz1/2W-1 and quantum efficiencies of 32% at the peak responsivity wavelength of around 7.9 μm. Furthermore, high-performance VLWIR single element photodiodes are discussed. The silicon dioxide passivation of VLWIR photodiodes is also presented, which resulted in an approximately 5 times increase of the sidewall resistivity. The latest developments in this material system lend further support for its use as a high-performance alternative for infrared optical systems compared to the current state-of-the-art imaging systems, especially those approaching the long-wavelength and very-long-wavelength infrared.

Paper Details

Date Published: 28 February 2006
PDF: 11 pages
Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 61270U (28 February 2006); doi: 10.1117/12.659120
Show Author Affiliations
Andrew Hood, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
Vaidya Nathan, Air Force Research Lab. (United States)
Meimei Z. Tidrow, Missile Defense Agency (United States)

Published in SPIE Proceedings Vol. 6127:
Quantum Sensing and Nanophotonic Devices III
Manijeh Razeghi; Gail J. Brown, Editor(s)

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