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Proceedings Paper

Fundamental characterization of silicon-containing spin-on hardmask for 193nm photolithography
Author(s): Vishal Sipani; Yoshi Hishiro; Mirzafer Abatchev
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Paper Abstract

In this contribution, we have performed the fundamental characterization of silicon-containing spin-on hardmasks. There has been an interest in using these materials as part of multi-layer resist (MLR) technology to replace CVD films in order to improve lithographic performance and lower the overall process cost. However, not much is known about the characteristics of these materials in terms of their resist compatibility and etch performance, based on their composition. We have characterized these materials using a number of analytical techniques, including: FTIR, XPS, etc. We have also studied the effect of numerous etching chemistries, such as CF4 and SO2/O2, to determine their etch characteristics. Finally, we provide some after-dry-develop etch profiles.

Paper Details

Date Published: 11 April 2006
PDF: 9 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532U (11 April 2006); doi: 10.1117/12.659102
Show Author Affiliations
Vishal Sipani, Micron Technology, Inc. (United States)
Yoshi Hishiro, Micron Technology, Inc. (United States)
Mirzafer Abatchev, Micron Technology, Inc. (United States)

Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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