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Proceedings Paper

InAs quantum dot infrared photodetectors on InP by MOCVD
Author(s): Wei Zhang; Ho-Chul Lim; Maho Taguchi; Alain Quivy; Manijeh Razeghi
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Paper Abstract

Here we report our recent results of InAs quantum dots grown on InP substrate by low-pressure metalorganic chemical vapor deposition (MOCVD) for the application of quantum dot infrared photodetector (QDIP). We have previously demonstrated the first InP-based QDIP with a peak detection wavelength at 6.4 μm and a detectivity of 1010cmHz1/2/W at 77K. Here we show our recent work toward shifting the detection wavelength to the 3-5 μm middlewavelength infrared (MWIR) range. The dependence of the quantum dot on the growth conditions is studied by atomic force microscopy, photoluminescence and Fourier transform infrared spectroscopy. The device results from the MWIR InAs/InP QDIPs are discussed. Right now, the performance of the QDIPs is still far below the predicted potential, and one of the reasons is the low quantum efficiency. Possible ways to increase the quantum efficiency of QDIPs are discussed.

Paper Details

Date Published: 28 February 2006
PDF: 8 pages
Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 61270M (28 February 2006); doi: 10.1117/12.659051
Show Author Affiliations
Wei Zhang, Northwestern Univ. (United States)
Ho-Chul Lim, Northwestern Univ. (United States)
Maho Taguchi, Northwestern Univ. (United States)
Alain Quivy, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 6127:
Quantum Sensing and Nanophotonic Devices III
Manijeh Razeghi; Gail J. Brown, Editor(s)

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