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Proceedings Paper

Phase field simulation of ferroelectric and antiferroelectric single crystals
Author(s): T. Liu; C. S. Lynch
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Paper Abstract

Ferroelectric materials exhibit spontaneous polarization, spontaneous strain and domain structures below the Curie temperature. The phase field approach has been used to simulate the formation of ferroelectric domain structures and the ferroelectric-antiferroelectric phase transformation. The evolution of phases and domain structures was simulated in ferroelectric single crystals by solving the time dependent Ginzburg-Landau (TDGL) equation with polarization as the order parameter. In the TDGL equation the free energy of a ferroelectric crystal is written as a function of polarization and applied fields. Change of temperature as well as application of stress and electric field leads to change of free energy level and therefore evolution of phase and domain states. In this work the temporal evolution of polarization field was computed by solving the TDGL equation with explicit time integration scheme. The finite difference method was implemented for the spatial description of the polarization. Cubic to tetragonal, cubic to rhombohedral and ferroelectric to antiferroelectric (tetragonal or rhombohedral) phase transformations were modeled and the formation of domain structures were simulated. Field induced polarization switching and the macroscopic material responses were simulated.

Paper Details

Date Published: 6 April 2006
PDF: 11 pages
Proc. SPIE 6170, Smart Structures and Materials 2006: Active Materials: Behavior and Mechanics, 617006 (6 April 2006); doi: 10.1117/12.658747
Show Author Affiliations
T. Liu, Georgia Institute of Technology (United States)
C. S. Lynch, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 6170:
Smart Structures and Materials 2006: Active Materials: Behavior and Mechanics
William D. Armstrong, Editor(s)

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