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Proceedings Paper

Systematic optimization of the thin-film stack by minimizing CD sensitivity
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Paper Abstract

The very tight critical dimension(CD) specification as well as the very small energy latitude(EL) of the 65-nm node and beyond, planned to be accomplished by ArF lithography, require that the control of the employed thin-film stack should also be very tight. In such cases, there are generally several optical parameters of the thin-film stack that have appreciable effects on CD variation. So, we can not just focus on minimizing the swing effect by minimizing substrate reflectivity, as we did conventionally. Here, we propose a systematic methodology for doing optimization of the thin-film stack when several optical parameters of the thin-film stack come into play simultaneously. By adopting a proper figure of merit, the optimization can be done automatically. The specially designed algorithm ensures that global optimization can be achieved.

Paper Details

Date Published: 21 March 2006
PDF: 10 pages
Proc. SPIE 6154, Optical Microlithography XIX, 615440 (21 March 2006); doi: 10.1117/12.658323
Show Author Affiliations
Shinn-Sheng Yu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Burn J. Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chih-Ming Ke, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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