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Proceedings Paper

Studies of electron trapping in III-nitride semiconductors
Author(s): Olena Lopatiuk; Andrei Osinsky; Leonid Chernyak
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Paper Abstract

Effects of electron irradiation on GaN and AlxGa1-xN doped with acceptor-forming species (Mg, C, Fe, and Mn) were studied by cathodoluminescence and electron beam induced current techniques. Low energy electron beam irradiation was shown to induce a systematic decay of the cathodoluminescence intensity, which is accompanied by increased electronic carrier diffusion length, indicating the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements allowed to estimate the activation energy for irradiation-induced effects, which was found to be comparable to the ionization energy of the dominant acceptor species. These observations are consistent with trapping of non- equilibrium electrons on deep, non-ionized acceptor levels. In (Al) GaN:Mg and GaN:C electrons are trapped by the ground state of the neutral acceptor atom, while in TM-doped compounds, electron irradiation induced processes appear to involve a more energetically accessible excited states of the acceptors.

Paper Details

Date Published: 3 March 2006
PDF: 15 pages
Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210H (3 March 2006); doi: 10.1117/12.658016
Show Author Affiliations
Olena Lopatiuk, Univ. of Central Florida (United States)
Andrei Osinsky, SVT Associates (United States)
Leonid Chernyak, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 6121:
Gallium Nitride Materials and Devices
Cole W. Litton; James G. Grote; Hadis Morkoc; Anupam Madhukar, Editor(s)

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