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Proceedings Paper

Gallium Nitride (GaN) based MODFET Devices for Power Electronics
Author(s): Hasina F. Huq
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Paper Details

Date Published:
Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210Z; doi: 10.1117/12.657933
Show Author Affiliations
Hasina F. Huq, The Univ. of Tennessee (United States)

Published in SPIE Proceedings Vol. 6121:
Gallium Nitride Materials and Devices
Cole W. Litton; James G. Grote; Hadis Morkoc; Anupam Madhukar, Editor(s)

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