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Proceedings Paper

Polarization management techniques for enhanced vertical and lateral transport in III-nitride superlattices
Author(s): Mohammad Z. Kauser; Andrei Osinsky; Brian Hertog; Amir Dabiran; Peter Chow
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Paper Abstract

We report on a technique for optimizing transport properties in p- and n-type AlGaN/GaN and GaN/InGaN superlattices. As we show highly conductive heterostructures can be obtained by inserting a graded doped layer, which reduces the barrier height while maintaining high sheet carrier density. For optimized p-type AlGaN/GaN SL, an eight fold reduction of the barrier height and a 1.5 times increase in sheet hole density is obtained compared to typical SL. The optimized structure yields 13 orders of magnitude improvement in vertical conductivity (σV) compared to typical SL, and 35 times improvement in lateral conductivity (σL) compared to bulk p-GaN. For optimized p-type GaN/InGaN SL, an improvement of more than 10 orders of magnitude in σV compared to typical SL is obtained with σL better than that of bulk p-InGaN. We also investigate n-type SLs as current spreading layers. A significant improvement in current distribution is obtained for the optimized SLs.

Paper Details

Date Published: 3 March 2006
PDF: 7 pages
Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210F (3 March 2006); doi: 10.1117/12.657894
Show Author Affiliations
Mohammad Z. Kauser, SVT Associates, Inc. (United States)
Univ. of Minnesota (United States)
Andrei Osinsky, SVT Associates, Inc. (United States)
Brian Hertog, SVT Associates, Inc. (United States)
Amir Dabiran, SVT Associates, Inc. (United States)
Peter Chow, SVT Associates, Inc. (United States)


Published in SPIE Proceedings Vol. 6121:
Gallium Nitride Materials and Devices
Cole W. Litton; James G. Grote; Hadis Morkoc; Anupam Madhukar, Editor(s)

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