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Proceedings Paper

Linewidth roughness reduction at the 55 nm node through combination of classical process optimization and application of surface conditioner solutions
Author(s): Patrick Wong; Wendy Gehoel; Stephan Sinkwitz; Peng Zhang; Manuel Jaramillo; Madhukar B. Rao; Bridget Horvath; Brenda Ross; Shawn Cassel
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Paper Abstract

In this paper, the standard ASML process was optimized to reduce LineWidth Roughness (LWR) while minimizing the impact on other process performance criteria such as Depth Of Focus (DOF) and Exposure Latitude (EL). The impact of classical process optimization parameters such as post exposure bake temperature and post exposure bake time were investigated together with less often varied parameters such as hard bake temperature. These parameters were studied in conjunction with novel surface conditioners to reduce LWR. The results show that a significant reduction in the LWR number can be obtained by combining the application of a dedicated surface conditioner solution with the fine tuning of other parameters such as post exposure bake and hard bake temperature. Several process parameters had to be tuned simultaneously to retain a decent process window for the fine tuned process although some EL had to be sacrificed.

Paper Details

Date Published: 29 March 2006
PDF: 13 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61533V (29 March 2006); doi: 10.1117/12.657875
Show Author Affiliations
Patrick Wong, ASML (Netherlands)
Wendy Gehoel, ASML (Netherlands)
Stephan Sinkwitz, ASML (Netherlands)
Peng Zhang, Air Products and Chemicals, Inc. (United States)
Manuel Jaramillo, Air Products and Chemicals, Inc. (United States)
Madhukar B. Rao, Air Products and Chemicals, Inc. (United States)
Bridget Horvath, Air Products and Chemicals, Inc. (United States)
Brenda Ross, Air Products and Chemicals, Inc. (United States)
Shawn Cassel, Air Products and Chemicals, Inc. (United States)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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