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Proceedings Paper

High aspect ratio plasma etching of bulk lead zirconate titanate
Author(s): Srimath S. Subasinghe; Abhijat Goyal; Srinivas A. Tadigadapa
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Paper Abstract

Lead Zirconate Titanate (PZT) is a high energy density active material with good piezoelectric coefficient and electromechanical coupling constant making it highly suitable for microsystems applications. In this paper, we present a rapid anisotropic high aspect ratio etching process for defining micron size features in PZT. We used an inductively coupled plasma reactive ion etching (ICP-RIE) system employing sulfur hexafluoride (SF6) and argon (Ar) based chemistry. A seed layer of Au/Cr was lithographically patterned onto fine lap finished PZT-4 substrates followed by electrodeposition of a thick 2-5 μm nickel on the seed layer, which acts as a hard mask during the etching process. The demonstrated technique was used to etch bulk PZT ceramic substrates, thereby opening possibilities for integration of bulk PZT substrates and structures into microsystems. A maximum etch rate of 19 μm/hr on PZT-4 and 25 μm/hr for PZT-5A compositions was obtained using 2000 W of ICP power, 475 W of substrate power, 5 sccm of SF6, and 50 sccm of Ar on PZT substrate. We have also demonstrated a high aspect ratio etch (>5:1) on a 3 μm feature size. Detailed analysis of the effects of ICP power, substrate power, and the etch gas composition on the etch rate of PZT are also presented in this article.

Paper Details

Date Published: 23 January 2006
PDF: 9 pages
Proc. SPIE 6109, Micromachining and Microfabrication Process Technology XI, 61090D (23 January 2006); doi: 10.1117/12.657751
Show Author Affiliations
Srimath S. Subasinghe, Penn State Univ. (United States)
Abhijat Goyal, Penn State Univ. (United States)
Srinivas A. Tadigadapa, Penn State Univ. (United States)


Published in SPIE Proceedings Vol. 6109:
Micromachining and Microfabrication Process Technology XI
Mary-Ann Maher; Harold D. Stewart; Jung-Chih Chiao, Editor(s)

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