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Proceedings Paper

Experimental measurement of photoresist modulation curves
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Paper Abstract

An approach to measurement of resist CD response to image modulation and dose is presented. An empirical model with just three terms is used to describe this response, allowing for direct calculation of photoresist modulation curves. A thresholded latent image response model has been tested to describe CD response for both 90 nm and 45 nm geometry. An assumption of a linear optical image to photoresist latent image correlation is shown as adequate for the 90 nm case, while the 45 nm case demonstrates significant non-linear behavior. This failure indicates the inadequacy of a "resist blur" as a complete descriptive function and uncovers the need for an additional spread function in OPE-style resist models.

Paper Details

Date Published: 20 March 2006
PDF: 6 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61542Z (20 March 2006); doi: 10.1117/12.657608
Show Author Affiliations
Anatoly Bourov, Rochester Institute of Technology (United States)
Amphibian Systems (United States)
Stewart A. Robertson, Rohm and Haas Electronic Materials (United States)
Bruce W. Smith, Amphibian Systems (United States)
Michael Slocum, Amphibian Systems (United States)
Emil C. Piscani, Amphibian Systems (United States)


Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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