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Proceedings Paper

Ferroelectric PZT/AlGaN/GaN field effect transistors
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Paper Abstract

Ferroelectric field effect transistors (FFETs) with hysteretic I-V characteristics were attained with 25 nm thick Pb(Zr0.52Ti0.48)O3 (PZT)/Si3N4 gated AlGaN/GaN heterostructure. The PZT films used in the gate of the device was deposited by magnetron rf-sputtering at the substrate temperature of 700 oC. Increasing the PZT deposition temperature from that in previous device structures from 600 oC to 700 oC we obtained much improved device performance in terms of the IV characteristics inclusive of hysteretic behavior. The pinch-off voltage was about 7 V in FFET device compared to 6 V in a the control (conventional) AlGaN/GaN device. Counterclockwise hysteresis appeared in the transfer characteristic curve of a FFET with a maximal drain current shift of about 10 mA at the gate-to-source voltage of -6 V.

Paper Details

Date Published: 3 March 2006
PDF: 5 pages
Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210S (3 March 2006); doi: 10.1117/12.657584
Show Author Affiliations
Youn-Seon Kang, Virginia Commonwealth Univ. (United States)
Bo Xiao, Virginia Commonwealth Univ. (United States)
Ya. I. Alivov, Virginia Commonwealth Univ. (United States)
Qian Fan, Virginia Commonwealth Univ. (United States)
Jinqiao Xie, Virginia Commonwealth Univ. (United States)
Hadis Morko, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 6121:
Gallium Nitride Materials and Devices
Cole W. Litton; James G. Grote; Hadis Morkoc; Anupam Madhukar, Editor(s)

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