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Proceedings Paper

Improved scatterometry method of critical dimension measurements and its application for control of development process
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Paper Abstract

Downscaling of microchip production technology continually increases requirements to precision of process control, and demands improvement of critical dimension (CD) measurement and control tools. In this paper we discuss the application of in situ method of critical dimension measurement for improvement of photomask development process. For this purpose scatterometry and fitting methods are applied to the CD end point detector system (CD EPD). The CD EPD system is different from the commonly used EPD system, which mainly detects the thickness of remaining resist. Measurement can be performed directly during development process, thus there is an advantage of measurement time decreasing in comparison with the ex situ method. In situ method allows one to control development precisely, and gives possibility to meet the requirements of process control. For the application of scatterometry to the CD measurement, diffraction analysis is carried out by using of rigorous coupled wave analysis (RCWA). We calculate the library of reflected spectra with various CD and heights of the pattern. These spectra are used for fitting with an experimentally measured one to get the CD and height. To increase precision and speed of measurements interpolation of spectra and various fitting methods are used.

Paper Details

Date Published: 24 March 2006
PDF: 10 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61520G (24 March 2006); doi: 10.1117/12.657324
Show Author Affiliations
Irina Pundaleva, Samsung Electronics Co. (South Korea)
Dongseok Nam, Samsung Electronics Co. (South Korea)
Hakseung Han, Samsung Electronics Co. (South Korea)
Donggun Lee, Samsung Electronics Co. (South Korea)
Woosung Han, Samsung Electronics Co. (South Korea)

Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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