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Proceedings Paper

Evanescent wave imaging in optical lithography
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Paper Abstract

New applications of evanescent imaging for microlithography are introduced. The use of evanescent wave lithography (EWL) has been employed for 26nm resolution at 1.85NA using a 193nm ArF excimer laser wavelength to record images in a photoresist with a refractive index of 1.71. Additionally, a photomask enhancement effect is described using evanescent wave assist features (EWAF) to take advantage of the coupling of the evanescent energy bound at the substrate-absorber surface, enhancing the transmission of a mask opening through coupled interference.

Paper Details

Date Published: 15 March 2006
PDF: 9 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61540A (15 March 2006); doi: 10.1117/12.657322
Show Author Affiliations
Bruce W. Smith, Rochester Institute of Technology (United States)
Yongfa Fan, Rochester Institute of Technology (United States)
Jianming Zhou, Rochester Institute of Technology (United States)
Neal Lafferty, Rochester Institute of Technology (United States)
Andrew Estroff, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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