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Proceedings Paper

Integration of the retical systematic CD errors into an OPC modeling and correction
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Paper Abstract

The impact of mask CD non-uniformity on the accuracy of optical proximity correction (OPC) models has been observed on several critical levels. In the current OPC model calibration flow, the mask effect is not explicitly separated from the optical and resist models. Instead, the resist model is compensating for the mask errors. In this paper, we report a detailed study of the effect of mask CD non-uniformity on OPC model accuracy using the established OPC model calibration flow. The influence of mask CD non-uniformity on the through process behavior of an OPC model is also discussed. A possible OPC flow to take the systematic mask CD error into consideration is proposed and a detailed study of mask modeling is present.

Paper Details

Date Published: 21 March 2006
PDF: 10 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61543I (21 March 2006); doi: 10.1117/12.657194
Show Author Affiliations
Geng Han, IBM Microelectronics (United States)
Scott Mansfield, IBM Microelectronics (United States)
Azalia Krasnoperova, IBM Microelectronics (United States)


Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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