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Proceedings Paper

EUV mask and chuck analysis: simulation and experimentation
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Paper Abstract

Extreme ultraviolet (EUV) masks and mask chucks require extreme flatness in order to meet the performance and timing specified by the International Technology Roadmap for Semiconductors (ITRS). The EUVL Mask and Chucking Standards, SEMI P37 and SEMI P40, specify the nonflatness of the mask frontside and backside, as well as the chucking surface, to be no more than 50 nm peak-to-valley (p-v). Understanding and characterizing the clamping ability of the electrostatic chuck and its effect on the mask flatness is a critical issue. In the present study, chucking experiments were performed using an electrostatic pin chuck and finite element (FE) models were developed to simulate the chucking. The frontside and backside surface flatness of several EUV substrates were measured using a Zygo large-area interferometer. Flatness data for the electrostatic chuck was also obtained and this data along with the substrate flatness data was used as the input for the FE modeling. Data from one substrate was selected for modeling and testing and is included in this paper. Electrostatic chucking experiments were conducted in a clean-room facility to minimize contamination due to particles. The substrate was chucked using an electrostatic pin chuck and the measured flatness was compared to the predictions obtained from the FE simulation.

Paper Details

Date Published: 22 March 2006
PDF: 11 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61510C (22 March 2006); doi: 10.1117/12.657154
Show Author Affiliations
Madhura Nataraju, Univ. of Wisconsin/ Madison (United States)
Jaewoong Sohn, Univ. of Wisconsin/ Madison (United States)
Andrew R. Mikkelson, Univ. of Wisconsin/ Madison (United States)
Kevin T. Turner, Univ. of Wisconsin/ Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin/ Madison (United States)
Chris K. Van Peski, SEMATECH, Inc. (United States)


Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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