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Proceedings Paper

Silicon on insulator inertial MEMS device processing
Author(s): William D. Sawyer; Mert S. Prince
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Paper Abstract

During the 1980's and 1990's the methods used to manufacture inertial MEMS devices could be divided into two groups; bulk and surface micromachining. Institutions which developed high precision inertial MEMS devices usually employed bulk micromachining processes. This was done to fabricate devices with large proof masses and stiff beams which result in a high scale factor, as well as high drive, and sense frequencies. New processes have been developed which are based on silicon on insulator (SOI) wafers. These processes combine the advantages of bulk and surface micromachining while enabling the etching of thick proof masses. This paper illustrates the manufacturing and performance advantages of an SOI inertial MEMS process.

Paper Details

Date Published: 23 January 2006
PDF: 7 pages
Proc. SPIE 6113, MEMS/MOEMS Components and Their Applications III, 611302 (23 January 2006); doi: 10.1117/12.657138
Show Author Affiliations
William D. Sawyer, The Charles Stark Draper Lab. (United States)
Mert S. Prince, The Charles Stark Draper Lab. (United States)

Published in SPIE Proceedings Vol. 6113:
MEMS/MOEMS Components and Their Applications III
Scot S. Olivier; Srinivas A. Tadigadapa; Albert K. Henning, Editor(s)

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