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Proceedings Paper

Resolution enhanced top anti reflective coating materials for ArF immersion lithography
Author(s): Jae-Chang Jung; Sung-Koo Lee; Keun-Do Ban; Cheolkyu Bok; Hyeong-Soo Kim; Seung-Chan Moon; Jinwoong Kim
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Paper Abstract

Recently, a new technology called ArF immersion lithography is emerging as a main stream of next generation lithography. However, the first problem of this technology is contamination issues that come from the dissolution of contaminants from the photoresist to the immersion liquid. The second problem is defect issue that comes from interaction between immersion liquid and resist. To solve these two problems, we have developed top antireflective coating (TARC) material. This TARC material can be coated on resist without damage to the resist property. In addition, this TARC material is easily developable by conventional 2.38 wt% TMAH solution. The reflective index of this TARC is adjusted to 1.55, so it can act as an antireflective material. To this TARC material for immersion, quencher gradient resist process (QGRP) was applied also. As a result, we could improve resolution and process margin. However, some of resists showed defects that were generated by this TARC material and QGRP. To solve this defect problem, we introduced buffer function to the TARC material. Thanks to this buffer function, we could minimize defects of resist pattern in immersion lithography.

Paper Details

Date Published: 29 March 2006
PDF: 6 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61531Z (29 March 2006); doi: 10.1117/12.657093
Show Author Affiliations
Jae-Chang Jung, Hynix Semiconductor Inc. (South Korea)
Sung-Koo Lee, Hynix Semiconductor Inc. (South Korea)
Keun-Do Ban, Hynix Semiconductor Inc. (South Korea)
Cheolkyu Bok, Hynix Semiconductor Inc. (South Korea)
Hyeong-Soo Kim, Hynix Semiconductor Inc. (South Korea)
Seung-Chan Moon, Hynix Semiconductor Inc. (South Korea)
Jinwoong Kim, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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