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Proceedings Paper

Process window OPC verification: dry versus immersion lithography for the 65nm node
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Paper Abstract

Ensuring robust patterning after OPC is becoming more and more difficult due to the continuous reduction of layout dimensions and diminishing process windows associated with each successive lithographic generation. Lithographers must guarantee high imaging fidelity throughout the entire range of normal process variations. To verify the printability of a design across process window, compact optical models similar to those used for standard OPC are used. These models are calibrated from experimental data measured at the limits of the process window. They are then applied to the design to predict potential printing failures. This approach has been widely used for dry lithography. With the emergence of immersion lithography in production in the IC industry, the predictability of this approach has to be validated on this new lithographic process. In this paper, a comparison between the dry lithography process model and the immersion lithography process model is presented for the Poly layer at 65 nm node patterning. Examples of specific failure predictions obtained separately with the two processes are compared with experimental results. A comparison in terms of process performance will also be a part of this study.

Paper Details

Date Published: 21 March 2006
PDF: 11 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61544D (21 March 2006); doi: 10.1117/12.657056
Show Author Affiliations
Amandine Borjon, Philips Semiconductors (France)
Freescale Semicondutor (France)
LETI-CEA (France)
Jerome Belledent, Philips Semiconductors (France)
Yorick Trouiller, LETI-CEA (France)
Kevin Lucas, Freescale Semicondutor (France)
Christophe Couderc, Philips Semiconductors (France)
Frank Sundermann, STMicroelectronics (France)
Jean-Christophe Urbani, STMicroelectronics (France)
Yves Rody, Philips Semiconductors (France)
Christian Gardin, Freescale Semicondutor (France)
Frank Foussadier, STMicroelectronics (France)
Patrick Schiavone, LTM, CNRS (France)


Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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