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Proceedings Paper

Investigation of the current resolution limits of advanced extreme ultraviolet (EUV) resists
Author(s): Patrick P. Naulleau; Clemens Rammeloo; Jason P. Cain; Kim Dean; Paul Denham; Kenneth A. Goldberg; Brian Hoef; Bruno La Fontaine; Adam R. Pawloski; Carl Larson; Greg Wallraff
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Paper Abstract

The past two years has brought tremendous improvements in the crucial area of resists for extreme ultraviolet (EUV) lithography. Nested and isolated line resolutions approaching 30 nm and 25 nm, respectively, have been demonstrated. These advances have been enabled, in large part, by the high-numerical (0.3) EUV imaging capabilities provided by the Berkeley microfield exposure tool (MET). Here we investigate the resolution limits in several advanced EUV resists using the Berkeley MET. Comparisons to aerial-image performance and the use of resolution-enhancing illumination conditions are used to establish the fact that the observed pattern resolution in the best chemically-amplified resists available today are indeed resist limited. Moreover, contrast transfer function (CTF) techniques are used to directly compare various advanced resists. Strong correlation is observed between relative CTF performance and observed resolution limits.

Paper Details

Date Published: 23 March 2006
PDF: 8 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61510Y (23 March 2006); doi: 10.1117/12.657005
Show Author Affiliations
Patrick P. Naulleau, Univ. at Albany (United States)
Clemens Rammeloo, Univ. at Albany (United States)
Jason P. Cain, Univ. of California, Berkeley (United States)
Kim Dean, SEMATECH (United States)
Paul Denham, Lawrence Berkeley National Lab. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Brian Hoef, Lawrence Berkeley National Lab. (United States)
Bruno La Fontaine, Advanced Micro Devices (United States)
Adam R. Pawloski, Advanced Micro Devices (United States)
Carl Larson, IBM Almaden Research Ctr. (United States)
Greg Wallraff, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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