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Proceedings Paper

High-throughput contact critical dimension and gray level value measurement
Author(s): Hong Xiao; Wei Fang; Yan Zhao; Mark Huang; Kai Wang; Darren Wong; Jack Jau
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Paper Abstract

A high-throughput e-beam monitoring system, eProfile®, is designed to quickly measure gray level value (GLV) and critical dimension (CD) of the structures of interest on product wafers. Two wafers are used in this study, one wafer is at after etch inspection (AEI) with contact mask focus exposure matrix (FEM), and another is normal exposure contact AEI wafer. High-throughput CD measurement of AEI wafer at holes with different patterns, such as semi-dense and SRAM array were measured with results matched the FEM expectation very well. The system is also be used to measure GLV of the SEM images on contact holes of a normal production wafer to reflected the under etch (high GLV) problem in a semi-dense hole pattern.

Paper Details

Date Published: 24 March 2006
PDF: 7 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61523L (24 March 2006); doi: 10.1117/12.656978
Show Author Affiliations
Hong Xiao, Hermes Microvision, Inc. (United States)
Wei Fang, Hermes Microvision, Inc. (United States)
Yan Zhao, Hermes Microvision, Inc. (United States)
Mark Huang, Hermes Microvision, Inc. (United States)
Kai Wang, Hermes Microvision, Inc. (United States)
Darren Wong, Hermes Microvision, Inc. (United States)
Jack Jau, Hermes Microvision, Inc. (United States)

Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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