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Proceedings Paper

High power injection lock 6 kHz 60 W laser for ArF dry/wet lithography
Author(s): Hakaru Mizoguchi; T. Inoue; J. Fujimoto; T. Suzuki; T. Matsunaga; S. Sakanishi; M. Kaminishi; Y. Watanabe; T. Nakaike; M. Shinbori; M. Yoshino; T. Kawasuji; H. Nogawa; H. Umeda; H. Taniguchi; Y. Sasaki; J. Kinoshita; T. Abe; H. Tanaka; H. Hayashi; K. Miyao; M. Niwano; A. Kurosu; M. Yashiro; H. Nagano; T. Igarashi; T. Mimura; K. Kakizaki
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Paper Abstract

The 193-nm lithography is moving from the pre-production to the mass production phase and its target node is shifting from 90 nm to 65 nm. And the ArF-immersion (Wet) technology is spotlighted as the enabling technology for below 45nm node1)2). Since 1998 we have demonstrated 30W, 0.12pm, @157nm line narrowed light source for microlithography with "Injection lock technology". The injection lock technology has advanced performances compared with MOPA (Master Oscillator Power Amplifier) technology, in efficiency, stability and spectral property. Based on this injection lock technology, we have successfully developed high power injection lock laser platform "GigaTwin" for 193nm lithography system GT40A (45W, 4000Hz, 11.25mJ) on Q4 20043)4). We have found solution for higher repetition rate up to 6kHz operation on the same platform as GT40A which is our original innovation named GT60A (Figure 1). In this paper, we will introduce this new GT60A (6kHz 60W) laser.

Paper Details

Date Published: 21 March 2006
PDF: 10 pages
Proc. SPIE 6154, Optical Microlithography XIX, 615425 (21 March 2006); doi: 10.1117/12.656972
Show Author Affiliations
Hakaru Mizoguchi, Gigaphoton Inc. (Japan)
T. Inoue, Ushio Inc., Komatsu Ltd. (Japan)
J. Fujimoto, Ushio Inc., Komatsu Ltd. (Japan)
T. Suzuki, Ushio Inc., Komatsu Ltd. (Japan)
T. Matsunaga, Ushio Inc., Komatsu Ltd. (Japan)
S. Sakanishi, Ushio Inc., Komatsu Ltd. (Japan)
M. Kaminishi, Ushio Inc., Komatsu Ltd. (Japan)
Y. Watanabe, Ushio Inc., Komatsu Ltd. (Japan)
T. Nakaike, Ushio Inc., Komatsu Ltd. (Japan)
M. Shinbori, Ushio Inc., Komatsu Ltd. (Japan)
M. Yoshino, Ushio Inc., Komatsu Ltd. (Japan)
T. Kawasuji, Ushio Inc., Komatsu Ltd. (Japan)
H. Nogawa, Ushio Inc., Komatsu Ltd. (Japan)
H. Umeda, Ushio Inc., Komatsu Ltd. (Japan)
H. Taniguchi, Ushio Inc., Komatsu Ltd. (Japan)
Y. Sasaki, Ushio Inc., Komatsu Ltd. (Japan)
J. Kinoshita, Ushio Inc., Komatsu Ltd. (Japan)
T. Abe, Ushio Inc., Komatsu Ltd. (Japan)
H. Tanaka, Ushio Inc., Komatsu Ltd. (Japan)
H. Hayashi, Ushio Inc., Komatsu Ltd. (Japan)
K. Miyao, Ushio Inc., Komatsu Ltd. (Japan)
M. Niwano, Ushio Inc., Komatsu Ltd. (Japan)
A. Kurosu, Ushio Inc., Komatsu Ltd. (Japan)
M. Yashiro, Ushio Inc., Komatsu Ltd. (Japan)
H. Nagano, Ushio Inc., Komatsu Ltd. (Japan)
T. Igarashi, Ushio Inc., Komatsu Ltd. (Japan)
T. Mimura, Ushio Inc., Komatsu Ltd. (Japan)
K. Kakizaki, Ushio Inc., Komatsu Ltd. (Japan)


Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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