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Proceedings Paper

Molecular resists based on cholate derivatives for electron-beam lithography
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Paper Abstract

We have designed and synthesized cholate derivatives (1,4-Bis(methyloxymethylcholate)cyclohexane: C2ChDM and 1,2-Bis(oxymethylcholate)ethane: C2E) to investigate the properties as a chemically amplified (CA) positive-tone Electron-beam (EB) resist material. C2ChDM and C2E which were easily obtained by one-step esterification from cholic acid and dichloride showed glass transition temperatures (Tgs), 85 and 84oC, respectively. These compounds were dissolved in propylene glycol monomethyl ether acetate (PGMEA) and formed amorphous thin films onto silicon wafers by using a spin-coat method. The etch rates of C2ChDM and C2E, which were measured under CF4/CHF3/Ar mixed gas process, were almost the same as poly (p-hydroxystyrene) (PHS). The model resist samples were formulated with C2ChDM and C2E as base matrix and photo-acid generator (PAG) originated from sulfonium-salt (resist-A and B, respectively). These resists showed good sensitivities with EB exposure. Furthermore, the FT-IR spectra of resist-A and B films unexposed and exposed by the EB lithography tool were measured. From the spectral changes of resist-A and B films, we confirmed that a cleavage reaction of ester bond occurred by EB irradiation and bake treatment, and these resists worked as common CA positive-tone resist. The evaluation results with the resist-A and B by using EB exposure tool indicated the resolution of 120 nm lines and spaces pattern.

Paper Details

Date Published: 29 March 2006
PDF: 7 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532D (29 March 2006); doi: 10.1117/12.656949
Show Author Affiliations
Daiju Shiono, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Taku Hirayama, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hideo Hada, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Junichi Onodera, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Tadashi Arai, Hitachi, Ltd. (Japan)
Atsuko Yamaguchi, Hitachi, Ltd. (Japan)
Kyoko Kojima, Hitachi, Ltd. (Japan)
Hiroshi Shiraishi, Hitachi, Ltd. (Japan)
Hiroshi Fukuda, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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