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Proceedings Paper

Combined absorber stack for optimization of the EUVL mask
Author(s): Seung Yoon Lee; Tae Geun Kim; Chung Yong Kim; In-Yong Kang; Yong-Chae Chung; Jinho Ahn
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Paper Abstract

Integration and optimization of the absorber stack has become a critical issue with the progress of the extreme ultraviolet lithography development because it influences many issues such as throughput, pattern fidelity, and mask yield. Simulation works to optimize an absorber stack were carried out and the results were empirically confirmed. TaN showed a great potential as an extreme ultraviolet absorber property but it did not meet the requirement for deep ultraviolet reflectivity for inspection. According to the simulation, Al2O3 was selected as an anti-reflection coating for DUV wavelength. Al2O3 ARC with optimum thickness reduces the DUV reflectivity from 42.5 to 4.4 % at 248 nm while maintaining the other properties. A novel absorber stack consisted of TaN absorber, Ru capping, and Al2O3 ARC is proposed, and the total thickness of the stack is only 47 nm and the EUV and DUV reflectivities are 0.97 % at 13.5 nm and 4.4 % at 248 nm, respectively.

Paper Details

Date Published: 23 March 2006
PDF: 9 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 61511Y (23 March 2006); doi: 10.1117/12.656928
Show Author Affiliations
Seung Yoon Lee, Hanyang Univ. (South Korea)
Tae Geun Kim, Hanyang Univ. (South Korea)
Chung Yong Kim, Hanyang Univ. (South Korea)
In-Yong Kang, Hanyang Univ. (South Korea)
Yong-Chae Chung, Hanyang Univ. (South Korea)
Jinho Ahn, Hanyang Univ. (South Korea)

Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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