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Proceedings Paper

Characterizing optical proximity effect difference among exposure tools
Author(s): Jongkyun Hong; Jeonkyu Lee; Eunsuk Kang; Hyunjo Yang; Donggyu Yim; Jinwoong Kim
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Paper Abstract

In terms of mass production, the CD variation between exposure tools is not avoidable because of different exposure tool characteristics. The major CD variation is coming from different optical proximity effect (OPE) response between exposure tools. Knowing and control the major contributor to the OPE, ramping up the device will be faster because of one reticle usage in various exposure tools. Therefore, the quantitative measurement and simulation with actual exposure tool characteristics need for analyzing proximity impact to CD. For this purpose, collecting CD data on the wafers and analyzing was carried out to find large ID bias exposure tool. Normal and abnormal exposure tool in terms of proximity matching is inspected using LITEL products of ISITM(In-situ Interferometer) and SMITM(Source Metrology Interferometer). ISITM and SMITM were for collecting machine characteristic and Solid-ETM was for simulation purposes. From this study, the practical procedure is proposed to prevent using of large proximity exposure tool for production line and the impact of actual tools characteristic on proximity matching is known.

Paper Details

Date Published: 24 March 2006
PDF: 8 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61522N (24 March 2006); doi: 10.1117/12.656918
Show Author Affiliations
Jongkyun Hong, Hynix Semiconductor Inc. (South Korea)
Jeonkyu Lee, Hynix Semiconductor Inc. (South Korea)
Eunsuk Kang, Hynix Semiconductor Inc. (South Korea)
Hyunjo Yang, Hynix Semiconductor Inc. (South Korea)
Donggyu Yim, Hynix Semiconductor Inc. (South Korea)
Jinwoong Kim, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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