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Proceedings Paper

New contamination experimental equipment in the NewSUBARU and evaluation of Si-capped multilayer mirrors using it
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Paper Abstract

New experimental equipment was installed in the NewSUBARU synchrotron radiation facility in order to investigate the contamination inhibition mechanism of projection optics for extreme ultraviolet lithography (EUVL). The equipment consisted of two all-metal sealed chambers, and the atmosphere was accurately controlled a over the wider degree of vacuum compared to the previous experimental equipment. The light source was the long undulator (LU) which can irradiate a sample with high EUV flux density of about 200 mW/mm2. Reflectivity and its distribution of an irradiated sample can be measured in situ. NEXAFS spectrum of the sample can be also obtained in situ utilizing the beam-line monochromator, which is a useful method for surface analysis. Using this equipment, EUV irradiation, reflectance measurement, and surface analysis were carried out for Si-capped Mo/Si multilayer (ML) samples. A wavelength dependence of photoemission current was changed at the irradiated area, which suggested that the phase change of standing wave at the ML surface occurred from contamination.

Paper Details

Date Published: 24 March 2006
PDF: 8 pages
Proc. SPIE 6151, Emerging Lithographic Technologies X, 615134 (24 March 2006); doi: 10.1117/12.656845
Show Author Affiliations
Masahito Niibe, Univ. of Hyogo (Japan)
Yukinobu Kakutani, Univ. of Hyogo (Japan)
Shigeru Terashima, Extreme Ultraviolet Lithography Association (Japan)
Hiromitsu Takase, Extreme Ultraviolet Lithography Association (Japan)
Yoshio Gomei, Extreme Ultraviolet Lithography Association (Japan)
Shuichi Matsunari, Extreme Ultraviolet Lithography Association (Japan)
Takashi Aoki, Extreme Ultraviolet Lithography Association (Japan)
Katsuhiko Murakami, Extreme Ultraviolet Lithography Association (Japan)
Yasuaki Fukuda, Extreme Ultraviolet Lithography Association (Japan)

Published in SPIE Proceedings Vol. 6151:
Emerging Lithographic Technologies X
Michael J. Lercel, Editor(s)

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