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Proceedings Paper

Fundamentals of the reaction-diffusion process in model EUV photoresists
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Paper Abstract

More demanding requirements are being made of photoresist materials for fabrication of nanostructures as the feature critical dimensions (CD) decrease. For extreme ultraviolet (EUV) resists, control of line width roughness (LWR) and high resist sensitivity are key requirements for their success. The observed LWR and CD values result from many factors in interdependent processing steps. One of these factors is the deprotection interface formed during the post-exposure bake (PEB) step. We use model EUV photoresist polymers to systematically address the influence of exposure-dose on the spatial evolution of the deprotection reaction at a model line edge for fixed PEB time using neutron reflectivity. The bilayer consists of an acid feeder layer containing photoacid generator (PAG) and a model photoresist polymer, poly(hydroxystyrene-co-tert-butylacrylate) with perdeuterated t-butyl protecting group. The deuterium labeling allows the protection profile to be measured with nanometer resolution. The evolution of two length scales that contribute to the compositional profile is discussed.

Paper Details

Date Published: 29 March 2006
PDF: 8 pages
Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615313 (29 March 2006); doi: 10.1117/12.656831
Show Author Affiliations
Kristopher A. Lavery, National Institute of Standards and Technology (United States)
Kwang-Woo Choi, Intel Corp. (United States)
Bryan D. Vogt, National Institute of Standards and Technology (United States)
Vivek M. Prabhu, National Institute of Standards and Technology (United States)
Eric K. Lin, National Institute of Standards and Technology (United States)
Wen-li Wu, National Institute of Standards and Technology (United States)
Sushil K. Satija, National Institute of Standards and Technology (United States)
Michael J. Leeson, Intel Corp. (United States)
Heidi B. Cao, Intel Corp. (United States)
George Thompson, Intel Corp. (United States)
Hai Deng, Intel Corp. (United States)
David S. Fryer, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 6153:
Advances in Resist Technology and Processing XXIII
Qinghuang Lin, Editor(s)

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