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Proceedings Paper

Characterization of line edge roughness using CD SAXS
Author(s): Ronald L. Jones; Wen-li Wu; Cheng-qing Wang; Eric K. Lin; Kwang-Woo Choi; Bryan J. Rice; George M. Thompson; Steven J. Weigand; Denis T. Keane
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Paper Abstract

We are developing a transmission X-ray scattering platform capable of measuring the average cross section and line edge roughness in patterns ranging from 10 nm to 500 nm in width with sub-nm precision. Critical Dimension Small Angle X-ray Scattering (CD-SAXS) measures the diffraction of a collimated X-ray beam with sub-Angstrom wavelength from a repeating pattern, such as those in light scatterometry targets, to determine the pattern periodicity, line width, line height, and sidewall angle. Here, we present results from CD-SAXS with an emphasis on line edge roughness characterization. Line edge roughness measurements from CD-SAXS are compared with top-down scanning electron microscopy values and comparative definitions are discussed.

Paper Details

Date Published: 24 March 2006
PDF: 8 pages
Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61520N (24 March 2006); doi: 10.1117/12.656829
Show Author Affiliations
Ronald L. Jones, National Institute of Standards and Technology (United States)
Wen-li Wu, National Institute of Standards and Technology (United States)
Cheng-qing Wang, National Institute of Standards and Technology (United States)
Eric K. Lin, National Institute of Standards and Technology (United States)
Kwang-Woo Choi, National Institute of Standards and Technology (United States)
Intel (United States)
Bryan J. Rice, Intel (United States)
George M. Thompson, Intel (United States)
Steven J. Weigand, DND-CAT, Advanced Photon Source (United States)
Denis T. Keane, DND-CAT, Advanced Photon Source (United States)


Published in SPIE Proceedings Vol. 6152:
Metrology, Inspection, and Process Control for Microlithography XX
Chas N. Archie, Editor(s)

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