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Proceedings Paper

Layout 'hot spots' for advancing optical technologies
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Paper Abstract

A pattern matching technique for quickly scanning layouts to find 'worst case' printing problems has been extended to and tested for accuracy on a progressive sequence of advances in optical lithography, including off-axis illumination, attenuated masks, optical-proximity correction and double exposure treatments. These extensions required including phase-variations from off-axis sources with the usual method for production of Maximum Lateral Test Patterns, and utilizing a composite match factor computer from McIntyre et al. to give a vulnerability score. Direct aerial image simulation of the projection printing of the local pattern shows that the basic trends are correctly extracted at high-speed with pattern matching. Pattern matching is found to be a useful tool under these technologies for prescreening layouts to find the most sensitive areas to residual effects, and also for quick comparison of worst case issues among different lithography treatments.

Paper Details

Date Published: 20 March 2006
PDF: 9 pages
Proc. SPIE 6154, Optical Microlithography XIX, 61543M (20 March 2006); doi: 10.1117/12.656819
Show Author Affiliations
Juliet Holwill, Univ. of California/Berkeley (United States)
Gregory McIntyre, Univ. of California/Berkeley (United States)
Wojtek Poppe, Univ. of California/Berkeley (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 6154:
Optical Microlithography XIX
Donis G. Flagello, Editor(s)

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